TW070J120B,S1Q

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Manufacturer Part	TW070J120B,S1Q
Çêker	Toshiba Electronic Devices and Storage Corporation
Terîf	SICFET N-CH 1200V 36A TO3P
Liq	berhemên nîvconductor veqetandî
Malbat	transîstor - fet, mosfet - yek
çerxa jiyanê:	New from this manufacturer.
Şandinî:	DHL FedEx Ups TNT EMS
Diravdanî	T/T Paypal Visa MoneyGram Western Union

Berdestbûnî

Ez bêzarim	273
UnitPrice	$ 33.97000

TW070J120B,S1Q Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

TW070J120B,S1Q Specifications

Awa	Terîf
series:	*
package:	Tube
part status:	Active
fet type:	N-Channel
technology:	SiCFET (Silicon Carbide)
drain to source voltage (vdss):	1200 V
current - continuous drain (id) @ 25°c:	36A (Tc)
drive voltage (max rds on, min rds on):	20V
rds on (max) @ id, vgs:	90mOhm @ 18A, 20V
vgs(th) (max) @ id:	5.8V @ 20mA
gate charge (qg) (max) @ vgs:	67 nC @ 20 V
vgs (max):	±25V, -10V
input capacitance (ciss) (max) @ vds:	1680 pF @ 800 V
fet feature:	Standard
power dissipation (max):	272W (Tc)
operating temperature:	-55°C ~ 175°C
mounting type:	Through Hole
supplier device package:	TO-3P(N)
package / case:	TO-3P-3, SC-65-3

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We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.