SI3473DDV-T1-GE3

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Manufacturer Part	SI3473DDV-T1-GE3
Çêker	Vishay / Siliconix
Terîf	MOSFET P-CHANNEL 12V 8A 6TSOP
Liq	berhemên nîvconductor veqetandî
Malbat	transîstor - fet, mosfet - yek
çerxa jiyanê:	New from this manufacturer.
Şandinî:	DHL FedEx Ups TNT EMS
Diravdanî	T/T Paypal Visa MoneyGram Western Union
DataSheet	SI3473DDV-T1-GE3 PDF

Berdestbûnî

Ez bêzarim	2943
UnitPrice	$ 0.53000

SI3473DDV-T1-GE3 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

SI3473DDV-T1-GE3 Specifications

Awa	Terîf
series:	TrenchFET® Gen III
package:	Tape & Reel (TR)Cut Tape (CT)
part status:	Active
fet type:	P-Channel
technology:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	12 V
current - continuous drain (id) @ 25°c:	8A (Tc)
drive voltage (max rds on, min rds on):	1.8V, 4.5V
rds on (max) @ id, vgs:	17.8mOhm @ 8.7A, 4.5V
vgs(th) (max) @ id:	1V @ 250µA
gate charge (qg) (max) @ vgs:	57 nC @ 8 V
vgs (max):	±8V
input capacitance (ciss) (max) @ vds:	1975 pF @ 6 V
fet feature:	-
power dissipation (max):	3.6W (Tc)
operating temperature:	-55°C ~ 150°C (TJ)
mounting type:	Surface Mount
supplier device package:	6-TSOP
package / case:	SOT-23-6 Thin, TSOT-23-6

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