G2R1000MT17D

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Manufacturer Part	G2R1000MT17D
Çêker	GeneSiC Semiconductor
Terîf	SIC MOSFET N-CH 4A TO247-3
Liq	berhemên nîvconductor veqetandî
Malbat	transîstor - fet, mosfet - yek
çerxa jiyanê:	New from this manufacturer.
Şandinî:	DHL FedEx Ups TNT EMS
Diravdanî	T/T Paypal Visa MoneyGram Western Union
DataSheet	G2R1000MT17D PDF

Berdestbûnî

Ez bêzarim	267553
UnitPrice	$ 4.86000

G2R1000MT17D Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

G2R1000MT17D Specifications

Awa	Terîf
series:	G2R™
package:	Tube
part status:	Active
fet type:	N-Channel
technology:	SiCFET (Silicon Carbide)
drain to source voltage (vdss):	1700 V
current - continuous drain (id) @ 25°c:	4A (Tc)
drive voltage (max rds on, min rds on):	20V
rds on (max) @ id, vgs:	1.2Ohm @ 2A, 20V
vgs(th) (max) @ id:	4V @ 2mA
gate charge (qg) (max) @ vgs:	-
vgs (max):	+20V, -5V
input capacitance (ciss) (max) @ vds:	139 pF @ 1000 V
fet feature:	-
power dissipation (max):	53W (Tc)
operating temperature:	-55°C ~ 175°C (TJ)
mounting type:	Through Hole
supplier device package:	TO-247-3
package / case:	TO-247-3

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We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.