SI1012X-T1-GE3

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Manufacturer Part	SI1012X-T1-GE3
Çêker	Vishay / Siliconix
Terîf	MOSFET N-CH 20V 500MA SC89-3
Liq	berhemên nîvconductor veqetandî
Malbat	transîstor - fet, mosfet - yek
çerxa jiyanê:	New from this manufacturer.
Şandinî:	DHL FedEx Ups TNT EMS
Diravdanî	T/T Paypal Visa MoneyGram Western Union
DataSheet	SI1012X-T1-GE3 PDF

Berdestbûnî

Ez bêzarim	2568
UnitPrice	$ 0.54000

SI1012X-T1-GE3 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

SI1012X-T1-GE3 Specifications

Awa	Terîf
series:	TrenchFET®
package:	Tape & Reel (TR)Cut Tape (CT)
part status:	Active
fet type:	N-Channel
technology:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	20 V
current - continuous drain (id) @ 25°c:	500mA (Ta)
drive voltage (max rds on, min rds on):	1.8V, 4.5V
rds on (max) @ id, vgs:	700mOhm @ 600mA, 4.5V
vgs(th) (max) @ id:	900mV @ 250µA
gate charge (qg) (max) @ vgs:	0.75 nC @ 4.5 V
vgs (max):	±6V
input capacitance (ciss) (max) @ vds:	-
fet feature:	-
power dissipation (max):	250mW (Ta)
operating temperature:	-55°C ~ 150°C (TJ)
mounting type:	Surface Mount
supplier device package:	SC-89-3
package / case:	SC-89, SOT-490

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