APT1001R1BN

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Manufacturer Part	APT1001R1BN
Çêker	Roving Networks / Microchip Technology
Terîf	MOSFET N-CH 1000V 10.5A TO247AD
Liq	berhemên nîvconductor veqetandî
Malbat	transîstor - fet, mosfet - yek
çerxa jiyanê:	New from this manufacturer.
Şandinî:	DHL FedEx Ups TNT EMS
Diravdanî	T/T Paypal Visa MoneyGram Western Union
DataSheet	APT1001R1BN PDF

Berdestbûnî

Ez bêzarim	3012817
UnitPrice	$ 0.00000

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APT1001R1BN Specifications

Awa	Terîf
series:	POWER MOS IV®
package:	Tube
part status:	Obsolete
fet type:	N-Channel
technology:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	1000 V
current - continuous drain (id) @ 25°c:	10.5A (Tc)
drive voltage (max rds on, min rds on):	10V
rds on (max) @ id, vgs:	1.1Ohm @ 5.25A, 10V
vgs(th) (max) @ id:	4V @ 1mA
gate charge (qg) (max) @ vgs:	130 nC @ 10 V
vgs (max):	±30V
input capacitance (ciss) (max) @ vds:	2950 pF @ 25 V
fet feature:	-
power dissipation (max):	310W (Tc)
operating temperature:	-55°C ~ 150°C (TJ)
mounting type:	Through Hole
supplier device package:	TO-247AD
package / case:	TO-247-3

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$ 0.00000