EPC2010C

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Manufacturer Part	EPC2010C
Çêker	EPC
Terîf	GANFET N-CH 200V 22A DIE OUTLINE
Liq	berhemên nîvconductor veqetandî
Malbat	transîstor - fet, mosfet - yek
çerxa jiyanê:	New from this manufacturer.
Şandinî:	DHL FedEx Ups TNT EMS
Diravdanî	T/T Paypal Visa MoneyGram Western Union
DataSheet	EPC2010C PDF

Berdestbûnî

Ez bêzarim	11234
UnitPrice	$ 6.56000

EPC2010C Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

EPC2010C Specifications

Awa	Terîf
series:	eGaN®
package:	Tape & Reel (TR)Cut Tape (CT)
part status:	Active
fet type:	N-Channel
technology:	GaNFET (Gallium Nitride)
drain to source voltage (vdss):	200 V
current - continuous drain (id) @ 25°c:	22A (Ta)
drive voltage (max rds on, min rds on):	5V
rds on (max) @ id, vgs:	25mOhm @ 12A, 5V
vgs(th) (max) @ id:	2.5V @ 3mA
gate charge (qg) (max) @ vgs:	5.3 nC @ 5 V
vgs (max):	+6V, -4V
input capacitance (ciss) (max) @ vds:	540 pF @ 100 V
fet feature:	-
power dissipation (max):	-
operating temperature:	-40°C ~ 150°C (TJ)
mounting type:	Surface Mount
supplier device package:	Die Outline (7-Solder Bar)
package / case:	Die

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