RF4E110BNTR

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Manufacturer Part	RF4E110BNTR
Çêker	ROHM Semiconductor
Terîf	MOSFET N-CH 30V 11A HUML2020L8
Liq	berhemên nîvconductor veqetandî
Malbat	transîstor - fet, mosfet - yek
çerxa jiyanê:	New from this manufacturer.
Şandinî:	DHL FedEx Ups TNT EMS
Diravdanî	T/T Paypal Visa MoneyGram Western Union
DataSheet	RF4E110BNTR PDF

Berdestbûnî

Ez bêzarim	2559
UnitPrice	$ 0.62000

RF4E110BNTR Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

RF4E110BNTR Specifications

Awa	Terîf
series:	-
package:	Tape & Reel (TR)Cut Tape (CT)
part status:	Active
fet type:	N-Channel
technology:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	30 V
current - continuous drain (id) @ 25°c:	11A (Ta)
drive voltage (max rds on, min rds on):	4.5V, 10V
rds on (max) @ id, vgs:	11.1mOhm @ 11A, 10V
vgs(th) (max) @ id:	2V @ 250µA
gate charge (qg) (max) @ vgs:	24 nC @ 10 V
vgs (max):	±20V
input capacitance (ciss) (max) @ vds:	1200 pF @ 15 V
fet feature:	-
power dissipation (max):	2W (Ta)
operating temperature:	150°C (TJ)
mounting type:	Surface Mount
supplier device package:	HUML2020L8
package / case:	8-PowerUDFN

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