BSM600C12P3G201

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Manufacturer Part	BSM600C12P3G201
Çêker	ROHM Semiconductor
Terîf	SICFET N-CH 1200V 600A MODULE
Liq	berhemên nîvconductor veqetandî
Malbat	transîstor - fet, mosfet - yek
çerxa jiyanê:	New from this manufacturer.
Şandinî:	DHL FedEx Ups TNT EMS
Diravdanî	T/T Paypal Visa MoneyGram Western Union

Berdestbûnî

Ez bêzarim	3
UnitPrice	$ 1200.00000

BSM600C12P3G201 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

BSM600C12P3G201 Specifications

Awa	Terîf
series:	-
package:	Tray
part status:	Active
fet type:	N-Channel
technology:	SiCFET (Silicon Carbide)
drain to source voltage (vdss):	1200 V
current - continuous drain (id) @ 25°c:	600A (Tc)
drive voltage (max rds on, min rds on):	-
rds on (max) @ id, vgs:	-
vgs(th) (max) @ id:	5.6V @ 182mA
gate charge (qg) (max) @ vgs:	-
vgs (max):	+22V, -4V
input capacitance (ciss) (max) @ vds:	28000 pF @ 10 V
fet feature:	-
power dissipation (max):	2460W (Tc)
operating temperature:	175°C (TJ)
mounting type:	Chassis Mount
supplier device package:	Module
package / case:	Module

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We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.