HGTD1N120BNS9A

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Manufacturer Part	HGTD1N120BNS9A
Çêker	Sanyo Semiconductor/ON Semiconductor
Terîf	IGBT 1200V 5.3A 60W TO252AA
Liq	berhemên nîvconductor veqetandî
Malbat	transîstor - igbts - yek
çerxa jiyanê:	New from this manufacturer.
Şandinî:	DHL FedEx Ups TNT EMS
Diravdanî	T/T Paypal Visa MoneyGram Western Union
DataSheet	HGTD1N120BNS9A PDF

Berdestbûnî

Ez bêzarim	7588
UnitPrice	$ 1.51000

HGTD1N120BNS9A Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

HGTD1N120BNS9A Specifications

Awa	Terîf
series:	-
package:	Tape & Reel (TR)Cut Tape (CT)
part status:	Active
igbt type:	NPT
voltage - collector emitter breakdown (max):	1200 V
current - collector (ic) (max):	5.3 A
current - collector pulsed (icm):	6 A
vce(on) (max) @ vge, ic:	2.9V @ 15V, 1A
power - max:	60 W
switching energy:	70µJ (on), 90µJ (off)
input type:	Standard
gate charge:	14 nC
td (on/off) @ 25°c:	15ns/67ns
test condition:	960V, 1A, 82Ohm, 15V
reverse recovery time (trr):	-
operating temperature:	-55°C ~ 150°C (TJ)
mounting type:	Surface Mount
package / case:	TO-252-3, DPak (2 Leads + Tab), SC-63
supplier device package:	TO-252AA

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We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.