HGT1S10N120BNST

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Manufacturer Part	HGT1S10N120BNST
Çêker	Sanyo Semiconductor/ON Semiconductor
Terîf	IGBT 1200V 35A 298W TO263AB
Liq	berhemên nîvconductor veqetandî
Malbat	transîstor - igbts - yek
çerxa jiyanê:	New from this manufacturer.
Şandinî:	DHL FedEx Ups TNT EMS
Diravdanî	T/T Paypal Visa MoneyGram Western Union
DataSheet	HGT1S10N120BNST PDF

Berdestbûnî

Ez bêzarim	961885
UnitPrice	$ 2.62000

HGT1S10N120BNST Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

HGT1S10N120BNST Specifications

Awa	Terîf
series:	-
package:	Tape & Reel (TR)Cut Tape (CT)
part status:	Active
igbt type:	NPT
voltage - collector emitter breakdown (max):	1200 V
current - collector (ic) (max):	35 A
current - collector pulsed (icm):	80 A
vce(on) (max) @ vge, ic:	2.7V @ 15V, 10A
power - max:	298 W
switching energy:	320µJ (on), 800µJ (off)
input type:	Standard
gate charge:	100 nC
td (on/off) @ 25°c:	23ns/165ns
test condition:	960V, 10A, 10Ohm, 15V
reverse recovery time (trr):	-
operating temperature:	-55°C ~ 150°C (TJ)
mounting type:	Surface Mount
package / case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
supplier device package:	TO-263AB

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